BCX70 series surface mount npn silicon transistor description: the central semiconductor BCX70 series types are npn silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. marking codes: BCX70g: ag BCX70h: ah BCX70j: aj BCX70k: ak maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 45 v collector-emitter voltage v ceo 45 v emitter-base voltage v ebo 5.0 v continuous collector current i c 100 ma peak collector current i cm 200 ma peak base current i bm 200 ma power dissipation p d 350 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i cbo v cb =45v 20 na i cbo v cb =45v, t a =150c 20 a i ebo v eb =4.0v 20 na bv cbo i c =10a 45 v bv ceo i c =10ma 45 v bv ebo i e =1.0a 5.0 v v ce(sat) i c =10ma, i b =250a 0.05 0.35 v v ce(sat) i c =50ma, i b =1.25ma 0.10 0.55 v v be(sat) i c =10ma, i b =250a 0.60 0.85 v v be(sat) i c =50ma, i b =1.25ma 0.70 1.05 v v be(on) v ce =5.0v, i c =2.0ma 0.55 0.75 v f t v ce =5.0v, i c =10ma, f=100mhz 100 250 mhz c c v cb =10v, i e =0, f=1.0mhz 1.7 pf c e v eb =0.5v, i c =0, f=1.0mhz 11 pf nf v ce =5.0v, i c =200a, r s =2.0k, f=1.0khz, bw=200hz 6.0 db BCX70g BCX70h BCX70j BCX70k min max min max min max min max h fe v ce =5.0v, i c =10a 40 30 100 h fe v ce =5.0v, i c =2.0ma 120 220 180 310 250 460 380 630 h fe v ce =1.0v, i c =50ma 50 70 90 100 sot-23 case r2 (20-november 2009) www.centralsemi.com
BCX70 series surface mount npn silicon transistor sot-23 case - mechanical outline lead code: 1) base 2) emitter 3) collector device marking code BCX70g ag BCX70h ah BCX70j aj BCX70k ak www.centralsemi.com r2 (20-november 2009)
|
